Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy
Crossref DOI link: https://doi.org/10.1007/s11182-016-0769-9
Published Online: 2016-06-04
Published Print: 2016-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Voitsekhovskii, A. V.
Nesmelov, S. N.
Dzyadukh, S. M.
License valid from 2016-06-01