Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices
Crossref DOI link: https://doi.org/10.1007/s11182-017-0925-x
Published Online: 2017-01-11
Published Print: 2017-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lazarenko, P. I.
Kozyukhin, S. A.
Sherchenkov, A. A.
Babich, A. V.
Timoshenkov, S. P.
Gromov, D. G.
Zabolotskaya, A. V.
Kozik, V. V.
License valid from 2017-01-01