To the Theory of Electron Passage in a Semiconductor Structure Consisting of Alternating Asymmetric Rectangular Potential Wells and Barriers
Crossref DOI link: https://doi.org/10.1007/s11182-017-0963-4
Published Online: 2017-02-14
Published Print: 2017-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rasulov, V. R.
License valid from 2017-02-01