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Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–x Cd x Te (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures

Crossref DOI link: https://doi.org/10.1007/s11182-017-1051-5

Published Online: 2017-05-08

Published Print: 2017-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Voitsekhovskii, A. V.

Nesmelov, S. N.

Dzyadukh, S. M.

Grigor’ev, D. V.

Lyapunov, D. V.
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