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Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd x Hg1–x Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

Crossref DOI link: https://doi.org/10.1007/s11182-017-1083-x

Published Online: 2017-05-31

Published Print: 2017-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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