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Mechanisms of Current Flow in the Diode Structure with an n + –p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film

Crossref DOI link: https://doi.org/10.1007/s11182-018-1252-6

Published Online: 2018-01-12

Published Print: 2018-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Tregulov, V. V.

Litvinov, V. G.

Ermachikhin, A. V.
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Article History

Received: 27 April 2016

Revised: 21 March 2017

First Online: 12 January 2018