Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator
Crossref DOI link: https://doi.org/10.1007/s11182-018-1294-9
Published Online: 2018-03-13
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Dzyadukh, S. M.
Voitsekhovskii, A. V.
Nesmelov, S. N.
Sidorov, G. Yu.
Varavin, V. S.
Vasil’ev, V. V.
Dvoretsky, S. A.
Mikhailov, N. N.
Yakushev, M. V.
Text and Data Mining valid from 2018-03-01
Article History
Received: 25 September 2017
First Online: 13 March 2018