Modeling the Deflection of Polarized Electrons with Energies in the Range 3.35–14 GeV in a Bent Silicon Crystal
Crossref DOI link: https://doi.org/10.1007/s11182-018-1330-9
Published Online: 2018-04-14
Published Print: 2018-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Koshcheev, V. P.
Shtanov, Yu. N.
Morgun, D. A.
Panina, T. A.
Text and Data Mining valid from 2018-04-01
Article History
Received: 7 March 2017
Revised: 1 November 2017
First Online: 14 April 2018