Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN
Crossref DOI link: https://doi.org/10.1007/s11182-018-1383-9
Published Online: 2018-05-08
Published Print: 2018-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Romanov, I. S.
Prudaev, I. A.
Brudnyi, V. N.
Text and Data Mining valid from 2018-05-01
Article History
Received: 28 September 2017
First Online: 8 May 2018