Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy
Crossref DOI link: https://doi.org/10.1007/s11182-019-01783-z
Published Online: 2019-09-10
Published Print: 2019-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Voitsekhovskii, A. V.
Nesmelov, S. N.
Dzyadukh, S. M.
Dvoretsky, S. A.
Mikhailov, N. N.
Sidorov, G. Yu.
Text and Data Mining valid from 2019-09-01
Version of Record valid from 2019-09-01
Article History
Received: 23 April 2019
First Online: 10 September 2019