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Numerical Optimisation and Performance Reliability Of a Novel Cylindrical Gate-All-Arround GAA-FET Nano-transistors with Dual-Channel 4H-SiC/3C-SiC and Triple-Channel 4H-SiC/3C-SiC/InN Materials for Low Power Applications

Crossref DOI link: https://doi.org/10.1007/s11220-025-00618-1

Published Online: 2025-07-15

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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