Leakage Reduction in 18 nm FinFET based 7T SRAM Cell using Self Controllable Voltage Level Technique
Crossref DOI link: https://doi.org/10.1007/s11277-020-07765-6
Published Online: 2020-09-05
Published Print: 2021-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kumar, T. Santosh
Tripathi, Suman Lata http://orcid.org/0000-0002-1684-8204
Text and Data Mining valid from 2020-09-05
Version of Record valid from 2020-09-05
Article History
First Online: 5 September 2020