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Design of Ultra-Low Power High-Q Single Ended Active Inductors for IF BPF of Receiver Frontend Using 130 nm BiCMOS Technology

Crossref DOI link: https://doi.org/10.1007/s11277-021-08483-3

Published Online: 2021-04-21

Published Print: 2021-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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