Effects of gate dielectric thickness and semiconductor thickness on device performance of organic field-effect transistors based on pentacene
Crossref DOI link: https://doi.org/10.1007/s11431-014-5540-2
Published Online: 2014-05-29
Published Print: 2014-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yi, Ran
Lou, ZhiDong
Hu, YuFeng
Cui, ShaoBo
Teng, Feng
Hou, YanBing
Liu, XiaoJun
Text and Data Mining valid from 2014-05-29