4H-SiC trench gate MOSFETs with field plate termination
Crossref DOI link: https://doi.org/10.1007/s11431-014-5663-5
Published Online: 2014-09-12
Published Print: 2014-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Song, QingWen
Zhang, YuMing
Zhang, YiMen
Tang, XiaoYan
Text and Data Mining valid from 2014-09-12