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Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

Crossref DOI link: https://doi.org/10.1007/s11431-015-5882-4

Published Online: 2015-07-17

Published Print: 2015-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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