Characterization of single-event multiple cell upsets in a custom SRAM in a 65 nm triple-well CMOS technology
Crossref DOI link: https://doi.org/10.1007/s11431-015-5906-0
Published Online: 2015-10-02
Published Print: 2015-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, HaiYan
Chen, JianJun
Yao, Long
Text and Data Mining valid from 2015-10-01
