Experimental characterization of the bipolar effect on P-hit single-event transients in 65 nm twin-well and triple-well CMOS technologies
Crossref DOI link: https://doi.org/10.1007/s11431-015-5999-5
Published Online: 2016-03-03
Published Print: 2016-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, JianJun
Liang, Bin
Chi, YaQing
Text and Data Mining valid from 2016-03-01