Simulation analysis of heavy-ion-induced single-event response for nanoscale bulk-Si FinFETs and conventional planar devices
Crossref DOI link: https://doi.org/10.1007/s11431-016-0241-4
Published Online: 2016-12-26
Published Print: 2017-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yu, JunTing
Chen, ShuMing
Chen, JianJun
Huang, PengCheng
License valid from 2016-12-26