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Monolayer MoS2-based transistors with low contact resistance by inserting ultrathin Al2O3 interfacial layer

Crossref DOI link: https://doi.org/10.1007/s11431-022-2330-3

Published Online: 2023-04-24

Published Print: 2023-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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