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Boosting the performance of β-Ga2O3/Sn-Ga2O3 n-N homojunction deep ultraviolet photodetector via interfacial Fermi-level reversal

Crossref DOI link: https://doi.org/10.1007/s11431-024-2912-9

Published Online: 2025-04-15

Published Print: 2025-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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