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Doping profile modification approach of the optimization of HfO x based resistive switching device by inserting AlO x layer

Crossref DOI link: https://doi.org/10.1007/s11432-015-5283-0

Published Online: 2015-04-19

Published Print: 2015-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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