Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices
Crossref DOI link: https://doi.org/10.1007/s11432-015-5362-2
Published Online: 2016-03-01
Published Print: 2016-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
He, Liang
Chen, Hua
Sun, Peng
Jia, Xiaofei
Dai, Chongguang
Liu, Jing
Shao, Long
Liu, Zhaoqing
Text and Data Mining valid from 2016-03-01