A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors
Crossref DOI link: https://doi.org/10.1007/s11432-016-9049-2
Published Online: 2017-08-25
Published Print: 2018-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Cai, Minxi
Yao, Ruohe
License valid from 2017-08-25