Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor
Crossref DOI link: https://doi.org/10.1007/s11432-017-9249-6
Published Online: 2017-11-06
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zhang, Jinxin
Guo, Hongxia
Zhang, Fengqi
He, Chaohui
Li, Pei
Yan, Yunyi
Wang, Hui
Zhang, Linxia
License valid from 2017-11-06