Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers
Crossref DOI link: https://doi.org/10.1007/s11432-018-9503-9
Published Online: 2019-01-16
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Peng, Fu
Yang, Chao
Deng, Siyu
Ouyang, Dongya
Zhang, Bo
Wei, Jie
Luo, Xiaorong
Text and Data Mining valid from 2019-01-16
Version of Record valid from 2019-01-16
Article History
Received: 9 February 2018
Revised: 21 April 2018
Accepted: 21 June 2018
First Online: 16 January 2019