Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric α-In2Se3 and WSe2
Crossref DOI link: https://doi.org/10.1007/s11432-019-1474-3
Published Online: 2019-10-30
Published Print: 2019-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yang, Huai
Xiao, Mengqi
Cui, Yu
Pan, Longfei
Zhao, Kai
Wei, Zhongming
Text and Data Mining valid from 2019-10-30
Version of Record valid from 2019-10-30
Article History
Received: 2 June 2019
Revised: 18 July 2019
Accepted: 24 July 2019
First Online: 30 October 2019