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A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

Crossref DOI link: https://doi.org/10.1007/s11432-019-2732-1

Published Online: 2020-09-01

Published Print: 2020-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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