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Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method

Crossref DOI link: https://doi.org/10.1007/s11432-021-3359-y

Published Online: 2022-09-05

Published Print: 2022-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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