2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity
Crossref DOI link: https://doi.org/10.1007/s11432-022-3520-8
Published Online: 2023-04-04
Published Print: 2023-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Huang, Ren
Zhang, Weihang
Zhang, Jincheng
Su, Chunxu
Liu, Xi
Fu, Liyu
Hao, Yue
Text and Data Mining valid from 2023-04-04
Version of Record valid from 2023-04-04
Article History
Received: 13 January 2022
Revised: 18 March 2022
Accepted: 15 June 2022
First Online: 4 April 2023