All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory
Crossref DOI link: https://doi.org/10.1007/s11432-022-3617-2
Published Online: 2023-07-04
Published Print: 2023-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Xiaojie
Feng, Zeyang
Cai, Jingwei
Tong, Hao
Miao, Xiangshui
Text and Data Mining valid from 2023-07-04
Version of Record valid from 2023-07-04
Article History
Received: 7 April 2022
Revised: 13 October 2022
Accepted: 4 November 2022
First Online: 4 July 2023