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Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure

Crossref DOI link: https://doi.org/10.1007/s11432-023-3940-x

Published Online: 2024-03-27

Published Print: 2024-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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