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Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate

Crossref DOI link: https://doi.org/10.1007/s11432-024-4003-y

Published Online: 2024-05-23

Published Print: 2024-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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