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High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs

Crossref DOI link: https://doi.org/10.1007/s11432-024-4112-x

Published Online: 2024-08-20

Published Print: 2024-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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