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High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation

Crossref DOI link: https://doi.org/10.1007/s11432-024-4164-1

Published Online: 2024-11-15

Published Print: 2024-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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