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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

Crossref DOI link: https://doi.org/10.1007/s11432-024-4197-y

Published Online: 2024-12-18

Published Print: 2025-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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