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High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure

Crossref DOI link: https://doi.org/10.1007/s11432-024-4302-0

Published Online: 2025-03-06

Published Print: 2025-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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