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Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1−xO2 ferroelectric film

Crossref DOI link: https://doi.org/10.1007/s11432-024-4407-x

Published Online: 2025-05-14

Published Print: 2025-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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