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Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns

Crossref DOI link: https://doi.org/10.1007/s11432-024-4413-2

Published Online: 2025-05-14

Published Print: 2025-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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