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Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer

Crossref DOI link: https://doi.org/10.1007/s11432-024-4429-7

Published Online: 2025-05-15

Published Print: 2025-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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