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High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts

Crossref DOI link: https://doi.org/10.1007/s11432-024-4460-y

Published Online: 2025-09-10

Published Print: 2025-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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