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Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing

Crossref DOI link: https://doi.org/10.1007/s11432-025-4483-1

Published Online: 2025-09-23

Published Print: 2025-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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