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High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process

Crossref DOI link: https://doi.org/10.1007/s11432-025-4494-2

Published Online: 2026-01-15

Published Print: 2026-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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