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High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap

Crossref DOI link: https://doi.org/10.1007/s11432-025-4572-5

Published Online: 2026-01-14

Published Print: 2026-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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