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Scattering-suppression induced two-dimensional hole gas mobility enhancement in GaN p-FETs with a multiperiod scattering-modulated barrier layer

Crossref DOI link: https://doi.org/10.1007/s11432-025-4582-7

Published Online: 2026-04-27

Published Print: 2026-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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