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High threshold voltage and enhanced threshold voltage stability of Schottky p-GaN gate HEMT by p-GaN bridge engineering

Crossref DOI link: https://doi.org/10.1007/s11432-025-4616-7

Published Online: 2026-04-01

Published Print: 2026-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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