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E-mode reverse p-i-n junction gate GaN HEMT with high VTH and enhanced gate drive voltage

Crossref DOI link: https://doi.org/10.1007/s11432-025-4679-4

Published Online: 2026-04-29

Published Print: 2026-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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