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Al1−xScxSbyN1−y: An opportunity for ferroelectric semiconductor field effect transistor

Published Online: 2024-09-14

Published Print: 2024-11

Authors

Guo, Shujin

Kong, Xianghua

Guo, Hong
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Text and Data Mining valid from 2024-09-14

Version of Record valid from 2024-09-14
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Article History

Received: 28 June 2024

Accepted: 24 July 2024

First Online: 14 September 2024

Ethics

: Conflict of interest The authors declare that they have no conflict of interest.

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