Monolayered semiconducting GeAsSe and SnSbTe with ultrahigh hole mobility
Crossref DOI link: https://doi.org/10.1007/s11467-018-0810-2
Published Online: 2018-07-11
Published Print: 2018-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Guo, Yu
Gao, Nan
Bai, Yizhen
Zhao, Jijun
Zeng, Xiao Cheng
Text and Data Mining valid from 2018-07-11
Article History
Received: 10 June 2018
Accepted: 24 June 2018
First Online: 11 July 2018