Self-aligned TiOx-based 3D vertical memristor for a high-density synaptic array
Crossref DOI link: https://doi.org/10.1007/s11467-024-1419-2
Published Online: 2024-07-03
Published Print: 2024-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lee, Subaek
Kim, Juri
Kim, Sungjun
Text and Data Mining valid from 2024-07-03
Version of Record valid from 2024-07-03
Article History
Received: 13 March 2024
Accepted: 25 April 2024
First Online: 3 July 2024
Ethics
: <b>Declarations</b> The authors declare that they have no competing interests and there are no conflicts.